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| PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM. 6 1 6 CATHODE 2 5 1 3 4 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. FEATURES As a remote variable resistor * 100 to 300 M * 99.9% linearity * 15 pF shunt capacitance * 100 G I/O isolation resistance As an analog switch * Extremely low offset voltage * 60 Vpk-pk signal capability * No charge injection or latch-up * ton, toff 15 S * UL recognized (File #E90700) * VDE recognized (File #E94766) - Ordering option `300' (e.g. H11F1.300) APPLICATIONS As a variable resistor - * Isolated variable attenuator * Automatic gain control * Active filter fine tuning/band switching As an analog switch - * Isolated sample and hold circuit * Multiplexed, optically isolated A/D conversion (c) 2003 Fairchild Semiconductor Corporation Page 1 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = 25C unless otherwise specified) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (10 s pulse, 1% duty cycle) LED Power Dissipation 25C Ambient Derate Linearly From 25C DETECTOR Detector Power Dissipation @ 25C Derate linearly from 25C Breakdown Voltage (either polarity) Continuous Detector Current (either polarity) PD BV4-6 I4-6 All H11F1, H11F2 H11F3 All 300 4.0 30 15 100 mW mW/C V V mA IF VR IF(pk) PD All All All All 60 5 1 100 1.33 mA V A mW mW/C TSTG TOPR TSOL All All All -55 to +150 -55 to +100 260 for 10 sec C C C Symbol Device Value Units ELECTRICAL CHARACTERISTICS (TA = 25C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current Capacitance OUTPUT DETECTOR Breakdown Voltage Either Polarity Off-State Dark Current Off-State Resistance Capacitance I4-6 = 10A, IF = 0 V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, TA = 100C V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, f = 1MHz BV4-6 I4-6 R4-6 C4-6 H11F1, H11F2 H11F3 All All All All 300 15 30 15 50 50 V nA A M pF IF = 16 mA VR = 5 V V = 0 V, f = 1.0 MHz VF IR CJ All All All 50 1.3 1.75 10 V A pF Test Conditions Symbol Device Min Typ* Max Unit (c) 2003 Fairchild Semiconductor Corporation Page 2 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 ISOLATION CHARACTERISTICS Parameter Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions f = 60Hz, t = 1 min. VI-O = 500 VDC VI-O = 0, f = 1.0 MHz Symbol VISO RISO CISO Min 5300 1011 2 Typ* Max Units Vac (rms) pF TRANSFER CHARACTERISTICS (TA = 25C Unless otherwise specified.) DC Characteristics Test Conditions Symbol Device H11F1 On-State Resistance IF = 16 mA, I4-6 = 100 A R4-6 H11F2 H11F3 H11F1 On-State Resistance Resistance, non-linearity and assymetry AC Characteristics Turn-On Time Turn-Off Time IF = 16 mA, I6-4 = 100 A IF = 16mA, I4-6 = 25 A RMS, f = 1kHz Test Conditions RL = 50, IF = 16mA, V4-6 = 5V RL = 50, IF = 16mA, V4-6 = 5V Symbol ton toff R6-4 H11F2 H11F3 All Device All All Min Typ* Min Typ* Max 200 330 470 200 330 470 0.1 Max 25 25 % Units S S Units (c) 2003 Fairchild Semiconductor Corporation Page 3 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Figure 1. Resistance vs. Input Current 800 600 I46 - OUTPUT CURRENT (A) r(on) - Normalized Resistance 10 400 200 0 -200 -400 -600 -800 10 IF - INPUT CURRENT - mA 100 -0.2 -0.1 0.0 0.1 0.2 IF = 2mA IF = 6mA IF = 10mA IF = 14mA IF = 18mA Figure 2. Output Characteristics IF = 18mA IF = 14mA IF = 10mA IF = 6mA IF = 2mA 1 0.1 1 Normalized to: IF = 16 mA I46 = 5 A RMS V46 - OUTPUT VOLTAGE (V) Figure 3. LED Forward Voltage vs. Forward Current 2.0 Figure 4. Off-state Current vs. Ambient Temperature 10000 NORMALIZED TO: V46 = 15V IF = 0mA TA = 25C 1.8 I46 - NORMALIZED DARK CURRENT VF - FORWARD VOLTAGE (V) 1000 1.6 1.4 TA = -55C TA = 25C 100 1.2 10 1.0 TA = 100C 0.8 0.1 1 10 100 IF - LED FORWARD CURRENT - mA 1 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Figure 5. Resistance vs. Temperature 3 V4-6 - MAXIMUM RMS SIGNAL VOLTAGE - mV NORMALIZED TO IF = 16mA I4-6 = 25A RMS TA = 25C Figure 6. Region of Linear Resistance 100 80 60 40 I4-6 - MAXIMUM RMS SIGNAL CURRENT - A MAXIMUM RMS VOLTAGE 100 80 60 40 r(on) - NORMALIZED RESISTANCE 2 Observed Range n dia Me ice v De 20 20 1K 1 0.8 0.6 10 8 6 4 MAXIMUM RMS CURRENT 10 8 6 4 2 2 0.4 -50 -25 0 25 50 75 TA - AMBIENT TEMPERATURE - C 100 1 100 1000 10K 100K r(on) RESISTANCE - (c) 2003 Fairchild Semiconductor Corporation Page 4 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Figure 7. Resistive non-linearity vs. D.C. Bias 5 r(on) - CHANGE IN RESISTANCE - % 4 3 2 I4-6 = 10 A RMS r(on) = 200 1 0 1 50 100 150 200 250 300 350 V4-6 - D.C. BIAS VOLTAGE - mA (c) 2003 Fairchild Semiconductor Corporation Page 5 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 TYPICAL APPLICATIONS AS A VARIABLE RESISTOR ISOLATED VARIABLE ATTENUATORS 500K AS AN ANALOG SIGNAL SWITCH ISOLATED SAMPLE AND HOLD CIRCUIT + VIN VIN H11F1 IF LOW FREQUENCY VOUT VIN H11F1 IF 50 VOUT VIN H11F1 C IF VOUT IF VOUT t HIGH FREQUENCY @1MHz DYNAMIC RANGE 50db FOR 0 IF 30mA @10KHz DYNAMIC RANGE 70db FOR 0 IF 30mA Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. AUTOMATIC GAIN CONTROL Accuracy and range are improved over conventional FET switches because the H11F has no charge injection from the control signal. The H11F also provides switching of either polarity input signal up to 30V magnitude. MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION CALL V1 H11F1 CALL Vn VIN VOUT + V1 V2 A/D CONVERTER H74A1 MSB MSB DATA INPUT LSB H11F1 DATA ACQUISITION Vn H11F1 LSB H74A1 500K PROCESS CONTROL LOGIC SYSTEM IF AGC SIGNAL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. ACTIVE FILTER FINE TUNING/BAND SWITCHING IF1 H11F1 IF2 H11F1 The optical isolation, linearity and low offset voltage of the H11F allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. TEST EQUIPMENT - KELVIN CONTACT POLARITY H11F1 IF A IF C IF TO A & B FOR POLARITY 1 C & D FOR POLARITY 2 H11F1 A1 A2 ITEST A3 DEVICE UNDER TEST PARAMETER SENSING BOARD B IF H11F1 IF1 ADJUSTS f1, IF2 ADJUSTS f2 D IF H11F1 The linearity of resistance and the low offset voltage of the H11F allows the remote tuning or band-switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1 IRED's controlling the filter's transfer characteristic. In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11F eliminates these troubles while providing faster switching. (c) 2003 Fairchild Semiconductor Corporation Page 6 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Package Dimensions (Through Hole) PIN 1 ID. 3 Package Dimensions (Surface Mount) 0.350 (8.89) 0.330 (8.38) 2 1 PIN 1 ID. 0.270 (6.86) 0.240 (6.10) 0.270 (6.86) 0.240 (6.10) SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 4 5 6 0.070 (1.78) 0.045 (1.14) 0.300 (7.62) TYP 0.200 (5.08) 0.135 (3.43) 0.200 (5.08) 0.165 (4.18) 0.020 (0.51) MIN 0.100 (2.54) TYP 0.016 (0.41) 0.008 (0.20) 0.154 (3.90) 0.100 (2.54) 0.020 (0.51) MIN 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0 to 15 0.300 (7.62) TYP Lead Coplanarity : 0.004 (0.10) MAX Package Dimensions (0.4" Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.270 (6.86) 0.240 (6.10) 0.070 (1.78) 0.060 (1.52) 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 0.415 (10.54) 0.100 (2.54) 0.295 (7.49) 0.030 (0.76) SEATING PLANE 0.200 (5.08) 0.135 (3.43) 0.154 (3.90) 0.100 (2.54) 0.004 (0.10) MIN 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0 to 15 0.400 (10.16) TYP NOTE All dimensions are in inches (millimeters) (c) 2003 Fairchild Semiconductor Corporation Page 7 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 ORDERING INFORMATION Option S SD W 300 300W 3S 3SD Order Entry Identifier .S .SD .W .300 .300W .3S .3SD Description Surface Mount Lead Bend Surface Mount; Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel MARKING INFORMATION 1 H11F1 V XX YY K 3 4 5 2 6 Definitions 1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) Two digit year code, e.g., `03' Two digit work week ranging from `01' to `53' Assembly package code (c) 2003 Fairchild Semiconductor Corporation Page 8 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Carrier Tape Specifications 12.0 0.1 4.85 0.20 0.30 0.05 4.0 0.1 4.0 0.1 O1.55 0.05 1.75 0.10 7.5 0.1 13.2 0.2 9.55 0.20 16.0 0.3 0.1 MAX 10.30 0.20 O1.6 0.1 User Direction of Feed NOTE All dimensions are in inches (millimeters) Tape and reel quantity is 1,000 units per reel Reflow Profile (Black Package, No Suffix) 300 Temperature (C) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 225 C peak 215C, 10-30 s Time above 183C, 60-150 sec Ramp up = 3C/sec 3.5 4 4.5 * Peak reflow temperature: 225C (package surface temperature) * Time of temperature higher than 183C for 60-150 seconds * One time soldering reflow is recommended Time (Minute) (c) 2003 Fairchild Semiconductor Corporation Page 9 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2003 Fairchild Semiconductor Corporation Page 10 of 10 3/19/03 |
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